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Scaling the 3D bumps pitch from 20 to 10 μm, focusing on the wet Cu seed etch process development

dc.contributor.authorSuhard, Samuel
dc.contributor.authorMoussa, Alain
dc.contributor.authorSlabbekoorn, John
dc.contributor.authorBeirnaert, Filip
dc.contributor.authorDe Preter, Inge
dc.contributor.authorHolsteyns, Frank
dc.date.accessioned2021-10-22T06:13:25Z
dc.date.available2021-10-22T06:13:25Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24573
dc.sourceIIOimport
dc.titleScaling the 3D bumps pitch from 20 to 10 μm, focusing on the wet Cu seed etch process development
dc.typeProceedings paper
dc.contributor.imecauthorSuhard, Samuel
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorSlabbekoorn, John
dc.contributor.imecauthorBeirnaert, Filip
dc.contributor.imecauthorDe Preter, Inge
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecMoussa, Alain::0000-0002-6377-4199
dc.source.peerreviewyes
dc.source.beginpage237
dc.source.endpage240
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XII - UCPSSXII
dc.source.conferencedate21/09/2014
dc.source.conferencelocationBrussels Belgium
dc.identifier.urlhttp://www.scientific.net/SSP.219.237
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 219


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