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Use of X-ray techniques in the development of Ge MOSFET devices

dc.contributor.authorSun, Jianwu
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorTielens, Hilde
dc.contributor.authorRyan, Paul
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-22T06:13:53Z
dc.date.available2021-10-22T06:13:53Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24574
dc.sourceIIOimport
dc.titleUse of X-ray techniques in the development of Ge MOSFET devices
dc.typeMeeting abstract
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceEMRS Fall Meeting, Symposium J: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Appl.
dc.source.conferencedate15/09/2014
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec


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