dc.contributor.author | Wostyn, Kurt | |
dc.contributor.author | Dhayalan, Sathish Kumar | |
dc.contributor.author | Hikavyy, Andriy | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Douhard, Bastien | |
dc.contributor.author | Moussa, Alain | |
dc.contributor.author | Rondas, Dirk | |
dc.contributor.author | Kenis, Karine | |
dc.contributor.author | Mertens, Paul | |
dc.contributor.author | Holsteyns, Frank | |
dc.contributor.author | De Gendt, Stefan | |
dc.contributor.author | Profijt, Harald | |
dc.date.accessioned | 2021-10-22T08:25:47Z | |
dc.date.available | 2021-10-22T08:25:47Z | |
dc.date.issued | 2014 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/24833 | |
dc.source | IIOimport | |
dc.title | HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Wostyn, Kurt | |
dc.contributor.imecauthor | Hikavyy, Andriy | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Douhard, Bastien | |
dc.contributor.imecauthor | Moussa, Alain | |
dc.contributor.imecauthor | Rondas, Dirk | |
dc.contributor.imecauthor | Kenis, Karine | |
dc.contributor.imecauthor | Mertens, Paul | |
dc.contributor.imecauthor | Holsteyns, Frank | |
dc.contributor.imecauthor | De Gendt, Stefan | |
dc.contributor.orcidimec | Wostyn, Kurt::0000-0003-3995-0292 | |
dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 20 | |
dc.source.endpage | 23 | |
dc.source.conference | Ultra Clean Processing of Semiconductor Surfaces XII | |
dc.source.conferencedate | 21/09/2014 | |
dc.source.conferencelocation | Brussels Belgium | |
dc.identifier.url | http://www.scientific.net/SSP.219.20 | |
imec.availability | Published - imec | |
imec.internalnotes | Solid State Phenomena; Vol. 219 | |