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dc.contributor.authorWostyn, Kurt
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMoussa, Alain
dc.contributor.authorRondas, Dirk
dc.contributor.authorKenis, Karine
dc.contributor.authorMertens, Paul
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorProfijt, Harald
dc.date.accessioned2021-10-22T08:25:47Z
dc.date.available2021-10-22T08:25:47Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24833
dc.sourceIIOimport
dc.titleHF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth
dc.typeProceedings paper
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorRondas, Dirk
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage20
dc.source.endpage23
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XII
dc.source.conferencedate21/09/2014
dc.source.conferencelocationBrussels Belgium
dc.identifier.urlhttp://www.scientific.net/SSP.219.20
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 219


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