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Stacked-etch induced charge loss in hybrid floating gate cells using high- $j inter-gate dielectric

dc.contributor.authorZahid, Mohammed
dc.contributor.authorBreuil, Laurent
dc.contributor.authorDegraeve, Robin
dc.contributor.authorBlomme, Pieter
dc.contributor.authorTan, Chi Lim
dc.contributor.authorLisoni, Judit
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-22T08:49:18Z
dc.date.available2021-10-22T08:49:18Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24875
dc.sourceIIOimport
dc.titleStacked-etch induced charge loss in hybrid floating gate cells using high- $j inter-gate dielectric
dc.typeProceedings paper
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageMY-1.1
dc.source.endpageMY-1.5
dc.source.conferenceInternational Reliability Physics Symposium - IRPS
dc.source.conferencedate1/06/2014
dc.source.conferencelocationWaikoloa, HI USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6861156&contentType=Conference+Publications
imec.availabilityPublished - open access


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