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Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes

dc.contributor.authorGrasser, Tibor
dc.contributor.authorWaltl, Michael
dc.contributor.authorWimmer, Yannick
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorKosik, R.
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorResinger, Hans
dc.contributor.authorPobegen, Gregor
dc.contributor.authorEl-Sayed, A.
dc.contributor.authorShluger, A.
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-22T19:30:29Z
dc.date.available2021-10-22T19:30:29Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25337
dc.sourceIIOimport
dc.titleGate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage535
dc.source.endpage538
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
imec.availabilityPublished - imec


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