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Using the low frequency component of the background signal for SiGe and Ge growth monitoring

dc.contributor.authorHalder, Sandip
dc.contributor.authorSchulze, Andreas
dc.contributor.authorLeray, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorBast, Gerhard
dc.contributor.authorSimpson, Gavin
dc.contributor.authorUlea, Neli
dc.contributor.authorPolli, Marco
dc.date.accessioned2021-10-22T19:35:21Z
dc.date.available2021-10-22T19:35:21Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25356
dc.sourceIIOimport
dc.titleUsing the low frequency component of the background signal for SiGe and Ge growth monitoring
dc.typeProceedings paper
dc.contributor.imecauthorHalder, Sandip
dc.contributor.imecauthorLeray, Philippe
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBast, Gerhard
dc.contributor.imecauthorSimpson, Gavin
dc.contributor.orcidimecHalder, Sandip::0000-0002-6314-2685
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference26th Annual SEMI Advanced Semiconductor Manufacturing Conference - ASMC
dc.source.conferencedate3/05/2015
dc.source.conferencelocationSaratoga Springs, NY USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7164442
imec.availabilityPublished - open access


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