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dc.contributor.authorHussin, Razaidi
dc.contributor.authorGerrer, Louis
dc.contributor.authorDing, Jie
dc.contributor.authorWang, Liping
dc.contributor.authorAmoroso, Salvatore
dc.contributor.authorCheng, Binjie
dc.contributor.authorWeckx, Pieter
dc.contributor.authorSimicic, Marko
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVanderheyden, Annelies
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorKaczer, Ben
dc.contributor.authorAsenov, Asen
dc.date.accessioned2021-10-22T19:48:16Z
dc.date.available2021-10-22T19:48:16Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25406
dc.sourceIIOimport
dc.titleStatistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow
dc.typeProceedings paper
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage238
dc.source.endpage241
dc.source.conference45th European Solid State Device Research Conference - ESSDERC
dc.source.conferencedate14/09/2015
dc.source.conferencelocationGraz Austria
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7324758
imec.availabilityPublished - imec


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