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CD metrology for EUV lithography and etch

dc.contributor.authorJohanesen, H.
dc.contributor.authorKenslea, A.
dc.contributor.authorWilliamson, M.
dc.contributor.authorKnowles, M.
dc.contributor.authorKwakman, L.
dc.contributor.authorLevi, S.
dc.contributor.authorNishry, N.
dc.contributor.authorAdan, O.
dc.contributor.authorEnglard, I.
dc.contributor.authorVan Puymbroeck, Jan
dc.contributor.authorFelder, Dan
dc.contributor.authorGov, S.
dc.contributor.authorCohen, O.
dc.contributor.authorTurovets, I.
dc.date.accessioned2021-10-22T19:57:00Z
dc.date.available2021-10-22T19:57:00Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25436
dc.sourceIIOimport
dc.titleCD metrology for EUV lithography and etch
dc.typeProceedings paper
dc.contributor.imecauthorVan Puymbroeck, Jan
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage329
dc.source.endpage335
dc.source.conference26th Annual SEMI Advanced Semiconductor Manufacturing Conference - ASMC
dc.source.conferencedate3/05/2015
dc.source.conferencelocationSaratoga Springs, NY USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7164505
imec.availabilityPublished - open access


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