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Stress management techniques for GaN growth on 200mm silicon wafers for High power applications

dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorLiang, Hu
dc.contributor.authorNovak, Tomas
dc.contributor.authorZhao, Ming
dc.contributor.authorSaripalli, Yoga
dc.date.accessioned2021-10-22T20:02:27Z
dc.date.available2021-10-22T20:02:27Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25454
dc.sourceIIOimport
dc.titleStress management techniques for GaN growth on 200mm silicon wafers for High power applications
dc.typeProceedings paper
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorZhao, Ming
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.source.peerreviewyes
dc.source.conference18th International Workshop on Physics of Semiconductor Devices - IWPSD
dc.source.conferencedate7/12/2015
dc.source.conferencelocationBangalore India
imec.availabilityPublished - imec


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