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AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction

dc.contributor.authorMa, J.
dc.contributor.authorZhang, W.
dc.contributor.authorZhang, J.F.
dc.contributor.authorJi, Z.
dc.contributor.authorBenbakhti, B.
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-22T20:45:01Z
dc.date.available2021-10-22T20:45:01Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25587
dc.sourceIIOimport
dc.titleAC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageT34
dc.source.endpageT35
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate15/06/2015
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - open access


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