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Microscopic oxide defects causing BTI, RTN, and SILC on high-K FinFETs

dc.contributor.authorRzepa, Gerhard
dc.contributor.authorWaltl, Michael
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-22T22:27:41Z
dc.date.available2021-10-22T22:27:41Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25849
dc.sourceIIOimport
dc.titleMicroscopic oxide defects causing BTI, RTN, and SILC on high-K FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage144
dc.source.endpage147
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate9/09/2015
dc.source.conferencelocationWashington, DC USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7292279
imec.availabilityPublished - open access


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