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Novel junction design for NMOS Si bulk-FinFETs with extension doping by phosphorus doped silicate glass

dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorKimura, Y.
dc.contributor.authorDe Roest, David
dc.contributor.authorShi, Xiaoping
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorKim, Min-Soo
dc.contributor.authorChew, Soon Aik
dc.contributor.authorKubicek, Stefan
dc.contributor.authorSchram, Tom
dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorDemuynck, Steven
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Dan
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T22:34:42Z
dc.date.available2021-10-22T22:34:42Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25865
dc.sourceIIOimport
dc.titleNovel junction design for NMOS Si bulk-FinFETs with extension doping by phosphorus doped silicate glass
dc.typeMeeting abstract
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorDe Roest, David
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage596
dc.source.endpage599
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
imec.availabilityPublished - open access


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