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FOND (Fully Overlapped Nitride-Etch Defined Device): A New Device Architecture for High-Reliability and High-Performance Deep Submicron CMOS Technology

dc.contributor.authorMieville, Jean-Paul
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorDeferm, Ludo
dc.contributor.authorBellens, Rudi
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorSchoenmaker, Wim
dc.date.accessioned2021-09-29T12:43:56Z
dc.date.available2021-09-29T12:43:56Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/258
dc.sourceIIOimport
dc.titleFOND (Fully Overlapped Nitride-Etch Defined Device): A New Device Architecture for High-Reliability and High-Performance Deep Submicron CMOS Technology
dc.typeProceedings paper
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.source.peerreviewno
dc.source.beginpage4.5.1
dc.source.endpage4.5.4
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate12/12/1994
dc.source.conferencelocationSan Francisco, Ca USA
imec.availabilityPublished - imec


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