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Enhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursors

dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Deun, R.
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-22T22:50:34Z
dc.date.available2021-10-22T22:50:34Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25902
dc.sourceIIOimport
dc.titleEnhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursors
dc.typeProceedings paper
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpagena
dc.source.conferenceInternational Symposium on EcoTopia Science - ISETS
dc.source.conferencedate27/11/2015
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - imec


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