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Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures

dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Deun, Rik
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-22T22:51:00Z
dc.date.available2021-10-22T22:51:00Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25903
dc.sourceIIOimport
dc.titleEnhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures
dc.typeMeeting abstract
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceE-MRS Fall Meeting, Symposium O: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques and ...
dc.source.conferencedate15/09/2015
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - open access


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