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Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorFang, Wen
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.date.accessioned2021-10-22T22:53:43Z
dc.date.available2021-10-22T22:53:43Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25909
dc.sourceIIOimport
dc.titleImplications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conferenceInternational Conference on 1/f Noise and Fluctuations - ICNF
dc.source.conferencedate2/06/2015
dc.source.conferencelocationXi'An China
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288543
imec.availabilityPublished - imec


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