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Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications
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Authors
Simoen, Eddy
;
Ritzenthaler, Romain
;
Cho, Moon Ju
;
Schram, Tom
;
Horiguchi, Naoto
;
Aoulaiche, Marc
;
Spessot, Alessio
;
Fazan, Pierre
;
Claeys, Cor
Conference
ULSI Process Integration IX
Title
Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications
Publication type
Proceedings paper
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