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Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications

dc.contributor.authorSimoen, Eddy
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorCho, Moon Ju
dc.contributor.authorSchram, Tom
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSpessot, Alessio
dc.contributor.authorFazan, Pierre
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T22:55:16Z
dc.date.available2021-10-22T22:55:16Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25912
dc.sourceIIOimport
dc.titleIncrease in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorFazan, Pierre
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage281
dc.source.endpage289
dc.source.conferenceULSI Process Integration IX
dc.source.conferencedate11/10/2015
dc.source.conferencelocationPhoenix, AZ USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/69/10/281.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 69, Iss. 10


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