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Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs

dc.contributor.authorSpessot, Alessio
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCho, Moon Ju
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorFazan, Pierre
dc.date.accessioned2021-10-22T23:05:43Z
dc.date.available2021-10-22T23:05:43Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25935
dc.sourceIIOimport
dc.titleReliability impact of advanced doping techniques for DRAM peripheral MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorFazan, Pierre
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conferenceInternational Conference on IC Design and Technology - ICICDT
dc.source.conferencedate1/06/2015
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7165890
imec.availabilityPublished - open access


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