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Radiation hardness of electrical properties of n-channel UTBOX SOI by 2 MeV electron irradiation

dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorGoto, T.
dc.contributor.authorYoneoka, M.
dc.contributor.authorTsunoda, I.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T23:24:51Z
dc.date.available2021-10-22T23:24:51Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25976
dc.sourceIIOimport
dc.titleRadiation hardness of electrical properties of n-channel UTBOX SOI by 2 MeV electron irradiation
dc.typeOral presentation
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference28th International Conference on Defects in Semiconductors - ICDS
dc.source.conferencedate27/07/2015
dc.source.conferencelocationEspoo Finland
imec.availabilityPublished - imec


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