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Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation

dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorOgata, H.
dc.contributor.authorInoue, T.
dc.contributor.authorYoneoka, M.
dc.contributor.authorTsunoda, I.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T23:25:47Z
dc.date.available2021-10-22T23:25:47Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25978
dc.sourceIIOimport
dc.titleInvestigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation
dc.typeProceedings paper
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference28th International Conference on Defects in Semiconductors - ICDS
dc.source.conferencedate27/07/2015
dc.source.conferencelocationEspoo Finland
dc.identifier.urlhttp://icds-2015.org/wp-content/uploads/sites/7/2015/07/Posters-program_ICDS-2015.pdf
imec.availabilityPublished - open access


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