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dc.contributor.authorVais, Abhitosh
dc.contributor.authorMartens, Koen
dc.contributor.authorFranco, Jacopo
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorRoussel, Philippe
dc.contributor.authorSioncke, Sonja
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-22T23:49:53Z
dc.date.available2021-10-22T23:49:53Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26028
dc.sourceIIOimport
dc.titleThe relationship between border traps characterized by AC admittance and BTI in III-V MOS devices
dc.typeProceedings paper
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5A.7
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate19/04/2015
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7112742
imec.availabilityPublished - open access


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