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Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions

dc.contributor.authorVan Beek, Simon
dc.contributor.authorMartens, Koen
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorSwerts, Johan
dc.contributor.authorMertens, Sofie
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorMin, Tai
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-22T23:52:28Z
dc.date.available2021-10-22T23:52:28Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26033
dc.sourceIIOimport
dc.titleFour point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions
dc.typeProceedings paper
dc.contributor.imecauthorVan Beek, Simon
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Beek, Simon::0000-0002-2499-4172
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageMY.4
dc.source.conferenceIEEE International Reliability Physics Symposisum - IRPS
dc.source.conferencedate19/04/2015
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7112818
imec.availabilityPublished - open access


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