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Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

dc.contributor.authorWang, L.
dc.contributor.authorZhang, E.X.
dc.contributor.authorZhang, C.X.
dc.contributor.authorDuan, G.X.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorReed, R.A.
dc.contributor.authorSamsel, I.K.
dc.contributor.authorHachtel, J.
dc.contributor.authorAlles, M.L.
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorPantelides, S.T.
dc.contributor.authorGalloway, K.F.
dc.date.accessioned2021-10-23T00:51:21Z
dc.date.available2021-10-23T00:51:21Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26158
dc.sourceIIOimport
dc.titleTotal ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
dc.typeProceedings paper
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.beginpage22
dc.source.endpage25
dc.source.conferenceIEEE Nuclear & Space Radiation Effects Conference - NSREC
dc.source.conferencedate13/07/2015
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec


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