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Self-aligned-quadruple-patterning for N7/N5 silicon fins

dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorTao, Zheng
dc.contributor.authorGunay Demirkol, Anil
dc.contributor.authorLorusso, Gian
dc.contributor.authorHopf, Toby
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorSobieski, Daniel
dc.contributor.authorOu, Fung Suong
dc.contributor.authorHellin, David
dc.contributor.authorClark, William
dc.date.accessioned2021-10-23T10:04:36Z
dc.date.available2021-10-23T10:04:36Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26286
dc.sourceIIOimport
dc.titleSelf-aligned-quadruple-patterning for N7/N5 silicon fins
dc.typeProceedings paper
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorHellin, David
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageDOI: 10.1117/2.1
dc.source.conferenceSPIE Lithography Symposium Advanced Etch Technology for Nanopatterning V
dc.source.conferencedate22/02/2016
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttp://spie.org/newsroom/6378-self-aligned-quadruple-patterning-to-meet-requirements-for-fins-with-high-density
imec.availabilityPublished - open access
imec.internalnotesSPIE Newsroom


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