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Passivation of poly-Si channel vertical NAND devices du high pressure annealing

dc.contributor.authorBreuil, Laurent
dc.contributor.authorlisoni, Judit, G.
dc.contributor.authorDelhougne, Romain
dc.contributor.authorTan, Chi Lim
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorFurnemont, Arnaud
dc.date.accessioned2021-10-23T10:10:42Z
dc.date.available2021-10-23T10:10:42Z
dc.date.issued2016-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26382
dc.sourceIIOimport
dc.titlePassivation of poly-Si channel vertical NAND devices du high pressure annealing
dc.typeProceedings paper
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.source.peerreviewyes
dc.source.beginpage88
dc.source.endpage91
dc.source.conferenceInternational Memory Workshop - IMW
dc.source.conferencedate15/05/2016
dc.source.conferencelocationParis France
imec.availabilityPublished - imec


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