dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Nigam, Tanya | |
dc.contributor.author | Mertens, Paul | |
dc.contributor.author | Heyns, Marc | |
dc.date.accessioned | 2021-09-30T12:14:14Z | |
dc.date.available | 2021-09-30T12:14:14Z | |
dc.date.issued | 1998 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/2643 | |
dc.source | IIOimport | |
dc.title | Effect of Si surface roughness on the current-voltage characteristics of ultra-thin gate oxides | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Mertens, Paul | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.source.peerreview | no | |
dc.source.conference | 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS | |
dc.source.conferencedate | 21/09/1998 | |
dc.source.conferencelocation | Oostende Belgium | |
imec.availability | Published - imec | |
imec.internalnotes | Publ. in 1999; Zie C3486 | |