dc.contributor.author | Franco, Jacopo | |
dc.contributor.author | Kaczer, Ben | |
dc.contributor.author | Mukhopadhyay, Subhadeep | |
dc.contributor.author | Duhan, Pardeep | |
dc.contributor.author | Weckx, Pieter | |
dc.contributor.author | Roussel, Philippe | |
dc.contributor.author | Chiarella, Thomas | |
dc.contributor.author | Ragnarsson, Lars-Ake | |
dc.contributor.author | Trojman, Lionel | |
dc.contributor.author | Horiguchi, Naoto | |
dc.contributor.author | Spessot, Alessio | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Mocuta, Anda | |
dc.date.accessioned | 2021-10-23T10:52:00Z | |
dc.date.available | 2021-10-23T10:52:00Z | |
dc.date.issued | 2016 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/26629 | |
dc.source | IIOimport | |
dc.title | Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Franco, Jacopo | |
dc.contributor.imecauthor | Kaczer, Ben | |
dc.contributor.imecauthor | Weckx, Pieter | |
dc.contributor.imecauthor | Roussel, Philippe | |
dc.contributor.imecauthor | Chiarella, Thomas | |
dc.contributor.imecauthor | Ragnarsson, Lars-Ake | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.imecauthor | Spessot, Alessio | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.orcidimec | Franco, Jacopo::0000-0002-7382-8605 | |
dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
dc.contributor.orcidimec | Roussel, Philippe::0000-0002-0402-8225 | |
dc.contributor.orcidimec | Chiarella, Thomas::0000-0002-6155-9030 | |
dc.contributor.orcidimec | Ragnarsson, Lars-Ake::0000-0003-1057-8140 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 388 | |
dc.source.endpage | 401 | |
dc.source.conference | IEEE International Electron Devices Meeting - IEDM | |
dc.source.conferencedate | 3/12/2016 | |
dc.source.conferencelocation | San Francisco, CA USA | |
imec.availability | Published - open access | |