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Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole

dc.contributor.authorFranco, Jacopo
dc.contributor.authorVais, Abhitosh
dc.contributor.authorSioncke, Sonja
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorKaczer, Ben
dc.contributor.authorShie, Bo-Shiuan
dc.contributor.authorShi, Xiaoping
dc.contributor.authorReyhaneh, Mahlouji
dc.contributor.authorNyns, Laura
dc.contributor.authorZhou, Daisy
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMaes, Jan
dc.contributor.authorXie, Qi
dc.contributor.authorGivens, M.
dc.contributor.authorTang, F.
dc.contributor.authorJiang, X.
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorSchram, Tom
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorHellings, Geert
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorLinten, Dimitri
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T10:53:14Z
dc.date.available2021-10-23T10:53:14Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26633
dc.sourceIIOimport
dc.titleDemonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage42
dc.source.endpage43
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate13/06/2016
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7573371
imec.availabilityPublished - open access


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