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Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole

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142 since deposited on 2021-10-23
25last month
Acq. date: 2026-01-11

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1930 since deposited on 2021-10-23
Acq. date: 2026-01-11

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142 since deposited on 2021-10-23
25last month
Acq. date: 2026-01-11

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1930 since deposited on 2021-10-23
Acq. date: 2026-01-11

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