Browsing by author "Nyns, Laura"

A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET

Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017)

A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements

Padovani, Andrea; Kaczer, Ben; Pesic, Milan; Belmonte, Attilio; Popovici, Mihaela Ioana; Nyns, Laura; Linten, Dimitri; Afanasiev, Valeri; Shlyakhov, Ilya; Lee, Younggon; Park, Hokyung; Larcher, Luca (2019)

Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition

Ameen, Mahmoud; Nyns, Laura; Sioncke, Sonja; Lin, Dennis; Ivanov, Tsvetan; Conard, Thierry; Meersschaut, Johan; Feteha, M. Y.; Van Elshocht, Sven; Delabie, Annelies (2014)

ALD and parasitic growth characteristics of the tetrakisethylmethylamino hafnium TEMAH/H2O process

Nyns, Laura; Delabie, Annelies; Swerts, Johan; Van Elshocht, Sven; De Gendt, Stefan (2010)

ALD La-based oxides for Vt-tuning in high-k/metal gate stacks

Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Tois, E.; Delabie, Annelies; Ragnarsson, Lars-Ake; Yu, HongYu; Nyns, Laura; Adelmann, Christoph; Van Elshocht, Sven (2007)

Amorphous gadolinium aluminate as a dielectric and sulfur for indium phosphide passivation

van Dorp, Dennis; Nyns, Laura; Cuypers, Daniel; Ivanov, Tsvetan; Brizzi, Simone; Tallarida, Massimo; Fleischmann, Claudia; Hönicke, Philipp; Müller, Matthias; Richard, Olivier; Schmeisser, Dieter; De Gendt, Stefan; Lin, Dennis; Adelmann, Christoph (2019)

An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014)

Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

Franco, Jacopo; de Marneffe, Jean-Francois; Vandooren, Anne; Kimura, Yosuke; Nyns, Laura; Wu, Zhicheng; El-Sayed, A-M; Jech, M.; Waldhoer, D.; Claes, Dieter; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Afanas'ev, V.; Stesmans, A.; Horiguchi, Naoto; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2020)

Atomic layer deposition of Al2O3 on S-passivated Ge

Sioncke, Sonja; Ceuppens, Joris; Lin, Dennis; Nyns, Laura; Delabie, Annelies; Struyf, Herbert; De Gendt, Stefan; Muller, Matthias; Beckhoff, Burkhard; Caymax, Matty (2011)

Atomic layer deposition of Gd2O3 and Sc2O3 on In0.53Ga0.47As: Interfacial layer engineering

Ameen, Mahmoud; Nyns, Laura; Lin, Dennis; Ivanov, Tsvetan; Conard, Thierry; Meersschaut, Johan; Sioncke, Sonja; Feteha, Mohamed; Van Elshocht, Sven; Delabie, Annelies (2014)

Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications

Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007)

Atomic layer deposition of Hf-based materials in semiconductor applications

Nyns, Laura; Delabie, Annelies; Heyns, Marc; Pourtois, Geoffrey; Van Elshocht, Sven; Vinckier, Chris; De Gendt, Stefan (2008)

Atomic layer deposition of HfO2 on (100) and (110) oriented silicon surfaces

Nyns, Laura; Ragnarsson, Lars-Ake; Hall, Lindsey; Delabie, Annelies; Heyns, Marc; Van Elshocht, Sven; Vinckier, Chris; Zimmerman, Paul; De Gendt, Stefan (2007)

Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium

Sioncke, Sonja; Lin, Dennis; Nyns, Laura; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Franquet, Alexis; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Muller, Matthias; Kobe, Michael; Beckhoff, Burkhard; Caymax, Matty (2011)