Browsing by author "Nyns, Laura"
Now showing items 21-40 of 101
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Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks
Fadida, Sivan; Eisenberg, Moshe; Nyns, Laura; Van Elshocht, Sven; Caymax, Matty (2011) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Chemisorption of ALD precursors in and on porous low-k films
Verdonck, Patrick; Delabie, Annelies; Swerts, Johan; Farrell, Leo; Baklanov, Mikhaïl; Tielens, Hilde; Van Besien, Els; Witters, Thomas; Nyns, Laura; Van Elshocht, Sven (2013) -
Co active electrode enhances CBRAM performance and scaling potential
Belmonte, Attilio; Radhakrishnan, Janaki; Donadio, Gabriele Luca; Redolfi, Augusto; Delhougne, Romain; Nyns, Laura; Covello, Angelo; Vereecke, Guy; Franquet, Alexis; Spampinato, Valentina; Kundu, Shreya; Mao, Ming; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Correlation between current-voltage measurements and the barrier height determined by XPS in Ge p-MOS capacitors
Fadida, Sivan; Palumbo, F; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; Caymax, Matty; Eizenberg, Moshe (2013) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2010) -
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2011) -
Diffusion-mediated growth and size-fependent nanoparticle reactivity during ruthenium atomic layer deposition on dielectric substrates
Soethoudt, Job; Grillo, Fabio; Marques, Esteban; Van Ommen, Ruud; Tomczak, Yoann; Nyns, Laura; Van Elshocht, Sven; Delabie, Annelies (2018) -
Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack
Fadida, Sivan; Shekhter, P.; Cvetko, D.; Floreano, L.; Verdini, A; Nyns, Laura; Van Elshocht, Sven; Kymissis, I.; Eizenberg, Moshe (2014) -
Effect of remote oxygen scavenging on electrical properties of Ge-based metal-oxide-semiconductor capacitors
Fadida, Sivan; Nyns, Laura; Van Elshocht, Sven; Eizenberg, Moshe (2017) -
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
Reale, G.; Belmonte, Attilio; Fantini, Andrea; Radhakrishnan, Janaki; Redolfi, Augusto; Devulder, Wouter; Nyns, Laura; Kundu, Shreya; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Electrical characterization of the MOS (metal-oxide-semiconductor) system: High mobility substrates
Lin, Dennis; Brammertz, Guy; Sioncke, Sonja; Nyns, Laura; Alian, AliReza; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Hoffmann, Thomas Y. (2011) -
Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
Chang, Shou-Zen; Yu, Hong-Yu; Adelmann, Christoph; Delabie, Annelies; Wang, Xin Peng; Van Elshocht, Sven; Akheyar, Amal; Nyns, Laura; Swerts, Johan; Aoulaiche, Marc; Kerner, Christoph; Absil, Philippe; Hoffmann, Thomas Y.; Biesemans, Serge (2008-05) -
Electrical quality of III-V/oxide interfaces: good enough for MOSFET devices?
Brammertz, Guy; Alian, AliReza; Lin, Dennis; Nyns, Laura; Sioncke, Sonja; Merckling, Clement; Wang, Wei-E; Caymax, Matty; Hoffmann, Thomas Y. (2011) -
Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster
Veloso, Anabela; Jourdain, Anne; Hiblot, Gaspard; Schleicher, Filip; D'have, Koen; Sebaai, Farid; Radisic, Dunja; Loo, Roger; Hopf, Toby; De Keersgieter, An; Arimura, Hiroaki; Eneman, Geert; Favia, Paola; Geypen, Jef; Arutchelvan, Goutham; Vaisman Chasin, Adrian; Jang, Doyoung; Nyns, Laura; Rosseel, Erik; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Devriendt, Katia; Demuynck, Steven; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2021)