Browsing by author "Shi, Xiaoping"
Now showing items 1-20 of 54
-
15nm half-pitch patterning: EUV + SELF-aligned double patterning
Versluijs, Janko; Souriau, Laurent; Hellin, David; Orain, Isabelle; Kimura, Yoshie; Kunnen, Eddy; Dekkers, Harold; Shi, Xiaoping; Albert, Johan; Wiaux, Vincent; Xu, Kaidong (2012) -
15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU
Xu, Kaidong; Souriau, Laurent; Hellin, David; Versluijs, Janko; Wong, Patrick; Vangoidsenhoven, Diziana; Vandenbroeck, Nadia; Dekkers, Harold; Shi, Xiaoping; Albert, Johan; Tan, Chi Lim; Vertommen, Johan; Coenegrachts, Bart; Orain, I.; Kimura, Y.; Wiaux, Vincent; Boullart, Werner (2013) -
Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Rothschild, Aude; Shi, Xiaoping; Everaert, Jean-Luc; Kerner, Christoph; Chiarella, Thomas; Hoffmann, Thomas; Vrancken, Christa; Shickova, Adelina; Yoshinao, H.; Mitsuhashi, Riichirou; Niwa, Masaaki; Lauwers, Anne; Veloso, Anabela; Kittl, Jorge; Absil, Philippe; Biesemans, Serge (2007) -
Atomic layer deposition of Gd-doped HfO2 thin films
Adelmann, Christoph; Tielens, Hilde; Dewulf, Daan; Hardy, An; Pierreux, Dieter; Swerts, Johan; Rosseel, Erik; Shi, Xiaoping; Van Bael, Marlies; Kittl, Jorge; Van Elshocht, Sven (2010) -
Atomic layer deposition of GdHfOx thin films
Adelmann, Christoph; Pierreux, Dieter; Swerts, Johan; Rosseel, Erik; Shi, Xiaoping; Tielens, Hilde; Kesters, Jurgen; Van Elshocht, Sven; Kittl, Jorge (2009) -
CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Kottantharayil, Anil; Verheyen, Peter; Collaert, Nadine; Dixit, Abhisek; Kaczer, Ben; Snow, Jim; Vos, Rita; Locorotondo, Sabrina; Degroote, Bart; Shi, Xiaoping; Rooyackers, Rita; Mannaert, Geert; Brus, Stephan; Yim, Yong Sik; Lauwers, Anne; Goodwin, Michael; Kittl, Jorge; Van Dal, Mark; Richard, Olivier; Veloso, Anabela; Kubicek, Stefan; Beckx, Stephan; Boullart, Werner; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications
Kaushik, V.; De Gendt, Stefan; Caymax, Matty; Young, E.; Röhr, Erika; Van Elshocht, Sven; Delabie, Annelies; Claes, Martine; Shi, Xiaoping; Chen, Jerry; Carter, Richard; Conard, Thierry; Vandervorst, Wilfried; Schaekers, Marc; Heyns, Marc (2003) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON
Yu, HongYu; Singanamalla, Raghunath; Opsomer, Karl; Augendre, Emmanuel; Simoen, Eddy; Kittl, Jorge; Kubicek, Stefan; Severi, Simone; Shi, Xiaoping; Brus, Stephan; Zhao, Chao; de Marneffe, Jean-Francois; Locorotondo, Sabrina; Shamiryan, Denis; Van Dal, Mark; Veloso, Anabela; Lauwers, Anne; Niwa, Masaaki; Maex, Karen; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Deposition of Poly-SiGe with RTCVD
Shi, Xiaoping; Schaekers, Marc; Brus, Stephan; Zhao, Chao; Brijs, Bert; Yu, HongYu; Kottantharayil, Anil (2005-10) -
Deposition of undoped and in-situ doped amorphous and polycrystalline silicon with LPCVD
Schaekers, Marc; Shi, Xiaoping (2005) -
Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2010) -
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2011) -
Electrical characterization of the metal-vanadium dioxide interface and implications for memory applications
Martens, Koen; Radu, Iuliana; Mertens, Sofie; Shi, Xiaoping; Schaekers, Marc; Tielens, Hilde; Huyghebaert, Cedric; De Gendt, Stefan; Jurczak, Gosia; Afanasev, Valeri; Heyns, Marc; Kittl, Jorge (2011) -
Electrical characterization of the metal-vanadium dioxide interface and vanadium dioxide work function
Martens, Koen; Radu, Iuliana; Mertens, Sofie; Shi, Xiaoping; Schaekers, Marc; Tielens, Hilde; Huyghebaert, Cedric; De Gendt, Stefan; Jurczak, Gosia; Afanas'ev, Valerie; Heyns, Marc; Kittl, Jorge (2011) -
Electrical properties of vanadium dioxide devices for micro-electronic applications making use of metal-insulator phase transitions
Martens, Koen; Radu, Iuliana; Mertens, Sofie; Adelmann, Christoph; Shi, Xiaoping; Tielens, Hilde; Schaekers, Marc; Huyghebaert, Cedric; Van Elshocht, Sven; De Gendt, Stefan; Heyns, Marc; Kittl, Jorge (2011) -
Electrical properties of vanadium dioxide – dielectric – metal structures and the metal-insulator transition
Martens, Koen; Radu, Iuliana; Mertens, Sofie; Shi, Xiaoping; Schaekers, Marc; De Gendt, Stefan; Heyns, Marc; Kittl, Jorge (2012) -
Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition
Leys, Frederik; Liu, Cong; Shi, Xiaoping; Lamare, B.; Takeuchi, Shotaro; Schaekers, Marc; Loo, Roger; Woelk, E.; Caymax, Matty (2008) -
Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition
Leys, Frederik; Liu, Cong; Shi, Xiaoping; Lamare, B.; Takeuchi, Shotaro; Schaekers, Marc; Loo, Roger; Woelk, E.; Caymax, Matty (2008) -
Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodes
Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Higuchi, Yuichi; Lee, Jae Won; Simoen, Eddy; Roussel, Philippe; Cho, Moon Ju; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Brus, Stephan; Dangol, Anish; Paraschiv, Vasile; Vecchio, Emma; Shi, Xiaoping; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Richard, Olivier; Bender, Hugo; Chiarella, Thomas; Arimura, Hiroaki; Thean, Aaron; Horiguchi, Naoto (2013)