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CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Symposium on VLSI Technology. Digest of Technical Papers
Title
CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach