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CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Publication:
CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Date
2005
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kottantharayil, Anil
;
Verheyen, Peter
;
Collaert, Nadine
;
Dixit, Abhisek
;
Kaczer, Ben
;
Snow, Jim
;
Vos, Rita
;
Locorotondo, Sabrina
;
Degroote, Bart
;
Shi, Xiaoping
;
Rooyackers, Rita
;
Mannaert, Geert
;
Brus, Stephan
;
Yim, Yong Sik
;
Lauwers, Anne
;
Goodwin, Michael
;
Kittl, Jorge
;
Van Dal, Mark
;
Richard, Olivier
;
Veloso, Anabela
;
Kubicek, Stefan
;
Beckx, Stephan
;
Boullart, Werner
;
De Meyer, Kristin
;
Absil, Philippe
;
Jurczak, Gosia
;
Biesemans, Serge
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1910
since deposited on 2021-10-16
Acq. date: 2025-10-22
Citations
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Views
1910
since deposited on 2021-10-16
Acq. date: 2025-10-22
Citations