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CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach

Date

2005
Proceedings Paper
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dc.contributor.authorKottantharayil, Anil
dc.contributor.authorVerheyen, Peter
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDixit, Abhisek
dc.contributor.authorKaczer, Ben
dc.contributor.authorSnow, Jim
dc.contributor.authorVos, Rita
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorDegroote, Bart
dc.contributor.authorShi, Xiaoping
dc.contributor.authorRooyackers, Rita
dc.contributor.authorMannaert, Geert
dc.contributor.authorBrus, Stephan
dc.contributor.authorYim, Yong Sik
dc.contributor.authorLauwers, Anne
dc.contributor.authorGoodwin, Michael
dc.contributor.authorKittl, Jorge
dc.contributor.authorVan Dal, Mark
dc.contributor.authorRichard, Olivier
dc.contributor.authorVeloso, Anabela
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-16T02:39:23Z
dc.date.available2021-10-16T02:39:23Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10723
dc.source.beginpage198
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2005
dc.source.conferencelocationKyoto Japan
dc.source.endpage199
dc.title

CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach

dc.typeProceedings paper
dspace.entity.typePublication
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