Browsing by author "Givens, M."
Now showing items 1-6 of 6
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Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices
Arimura, Hiroaki; Ragnarsson, Lars-Ake; Oniki, Yusuke; Franco, Jacopo; Vandooren, Anne; Brus, Stephan; Leonhardt, A.; Sippola, P.; Ivanova, T.; Verni, G. Alessio; Chang, R-J; Xie, Q.; Givens, M.; Mitard, Jerome; Biesemans, Serge; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021) -
Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015) -
High performance La-doped HZO based ferroelectric capacitors by interfacial engineering
Popovici, Mihaela Ioana; Bizindavyi, Jasper; Favia, Paola; Clima, Sergiu; Alam, Md Nur Kutubul; Ramachandran, R. K.; Walke, Amey; Celano, Umberto; Leonhardt, A.; Mukherjee, Shankha; Richard, Olivier; Illiberi, A.; Givens, M.; Delhougne, Romain; Van Houdt, Jan; Kar, Gouri Sankar (2022) -
Low temperature source / drain epitaxy and functional silicides: essentials for ultimate contact scaling
Porret, Clément; Everaert, Jean-Luc; Schaekers, Marc; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Rosseel, Erik; Rengo, Gianluca; Loo, Roger; Khazaka, R.; Givens, M.; Piao, Xiaoyu; Mertens, Sofie; Heylen, Nancy; Mertens, Hans; Toledo de Carvalho Cavalcante, Camila; Sterckx, Gunther; Brus, Stephan; Nalin Mehta, Ankit; Korytov, Maxim; Batuk, Dmitry; Favia, Paola; Langer, Robert; Pourtois, Geoffrey; Swerts, Johan; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022) -
Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer
Vais, Abhitosh; Alian, AliReza; Nyns, Laura; Franco, Jacopo; Sioncke, Sonja; Putcha, Vamsi; Yu, Hao; Mols, Yves; Rooyackers, Rita; Lin, Dennis; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Mocuta, Anda; Collaert, Nadine; De Meyer, Kristin; Thean, Aaron (2016)