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Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
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1969 since deposited on 2021-10-23
Acq. date: 2025-12-11
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Views
1969 since deposited on 2021-10-23
Acq. date: 2025-12-11
Citations