Publication:

Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

Date

2015
Proceedings Paper
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dc.contributor.authorWaldron, Niamh
dc.contributor.authorSioncke, Sonja
dc.contributor.authorFranco, Jacopo
dc.contributor.authorNyns, Laura
dc.contributor.authorVais, Abhitosh
dc.contributor.authorZhou, Daisy
dc.contributor.authorLin, Dennis
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorSebaai, Farid
dc.contributor.authorXie, Qi
dc.contributor.authorGivens, M.
dc.contributor.authorTang, F.
dc.contributor.authorJiang, X.
dc.contributor.authorChiu, Eddie
dc.contributor.authorOpdebeeck, Ann
dc.contributor.authorMerckling, Clement
dc.contributor.authorMaes, Jan
dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorTeugels, Lieve
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorOpdebeeck, Ann
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T00:50:24Z
dc.date.available2021-10-23T00:50:24Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26156
dc.source.beginpage799
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage802
dc.title

Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

dc.typeProceedings paper
dspace.entity.typePublication
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