Publication:

Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

Date

Loading...
Thumbnail Image

Abstract

Description

Metrics

Views

1968 since deposited on 2021-10-23
Acq. date: 2025-10-23

Citations

Metrics

Views

1968 since deposited on 2021-10-23
Acq. date: 2025-10-23

Citations