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Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Publication:
Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Date
2015
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Waldron, Niamh
;
Sioncke, Sonja
;
Franco, Jacopo
;
Nyns, Laura
;
Vais, Abhitosh
;
Zhou, Daisy
;
Lin, Dennis
;
Boccardi, Guillaume
;
Sebaai, Farid
;
Xie, Qi
;
Givens, M.
;
Tang, F.
;
Jiang, X.
;
Chiu, Eddie
;
Opdebeeck, Ann
;
Merckling, Clement
;
Maes, Jan
;
van Dorp, Dennis
;
Teugels, Lieve
;
Sibaja-Hernandez, Arturo
;
De Meyer, Kristin
;
Barla, Kathy
;
Collaert, Nadine
;
Thean, Aaron
Journal
Abstract
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1968
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations
Metrics
Views
1968
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations