Browsing by author "Putcha, Vamsi"
Now showing items 1-20 of 54
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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
Benchmarking time-dependent variability of junctionless nanowire FETs
Kaczer, Ben; Rzepa, G.; Franco, Jacopo; Weckx, Pieter; Vaisman Chasin, Adrian; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Roussel, Philippe; Hellings, Geert; Veloso, Anabela; Matagne, Philippe; Grasser, T.; Linten, Dimitri (2017) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016) -
BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors
Vaisman Chasin, Adrian; Franco, Jacopo; Kaczer, Ben; Putcha, Vamsi; Weckx, Pieter; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, Naoto; Linten, Dimitri; Rzepa, Gerhard (2017) -
BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Kaczer, Ben; Xie, Qi; Calka, Pauline; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2017) -
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Franco, Jacopo; Putcha, Vamsi; Vais, Abhitosh; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Rzepa, Gerhard; Roussel, Philippe; Groeseneken, Guido; Heyns, Marc; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2017) -
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance
Peralagu, Uthayasankaran; Alian, AliReza; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Chang, Shane; Simoen, Eddy; Zhao, Simeng Ellen; De Jaeger, Brice; Fleetwood, Daniel M.; Wambacq, Piet; Zhao, Ming; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2019-12) -
Defect profiling in FEFET Si:HfO2 layers
O'Sullivan, Barry; Putcha, Vamsi; Izmailov, Roman; Afanas'ev, Valeri V.; Simoen, Eddy; Jung, Taehwan; Higashi, Yusuke; Degraeve, Robin; Truijen, Brecht; Kaczer, Ben; Ronchi, Nicolo; McMitchell, Sean; Banerjee, Kaustuv; Clima, Sergiu; Breuil, Laurent; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan (2020) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
Wu, Wei-Min; Chen, Shih-Hung; Putcha, Vamsi; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Yadav, Sachin; Parvais, Bertrand; Alian, AliReza; Collaert, Nadine; Ker, Ming-Dou; Groeseneken, Guido (2021) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Ker, Ming-Dou; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Collaert, Nadine; Groeseneken, Guido (2022-01-25) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Groeseneken, Guido; Ker, M.D.; Collaert, Nadine (2021) -
Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
Subirats, Alexandre; Arreghini, Antonio; Capogreco, Elena; Delhougne, Romain; Tan, Chi Lim; Hikavyy, Andriy; Breuil, Laurent; Degraeve, Robin; Putcha, Vamsi; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications
Zhao, S. E.; Putcha, Vamsi; Bury, Erik; Franco, Jacopo; Walke, Amey; Peralagu, Uthayasankaran; Zhao, Ming; Alian, AliReza; Kaczer, Ben; Waldron, Niamh; Linten, Dimitri; Parvais, Bertrand; Collaert, Nadine (2020) -
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Kaczer, Ben; Xie, Qi; Maes, Jan Willem; Tang, Fu; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2020) -
First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
Sioncke, Sonja; Franco, Jacopo; Vais, Abhitosh; Putcha, Vamsi; Nyns, Laura; Sibaja-Hernandez, Arturo; Rooyackers, Rita; Calderon Ardila, Sergio; Spampinato, Valentina; Franquet, Alexis; Maes, Willem; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Heyns, Marc; Linten, Dimitri; Mitard, Jerome; Thean, Aaron; Mocuta, Dan; Collaert, Nadine (2017) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020)