Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Conference contributions
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Publication:
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Copy permalink
Date
2017
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
36824.pdf
1.83 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Putcha, Vamsi
;
Vais, Abhitosh
;
Sioncke, Sonja
;
Waldron, Niamh
;
Zhou, Daisy
;
Rzepa, Gerhard
;
Roussel, Philippe
;
Groeseneken, Guido
;
Heyns, Marc
;
Collaert, Nadine
;
Linten, Dimitri
;
Grasser, Tibor
;
Kaczer, Ben
Journal
Abstract
Description
Metrics
Views
1944
since deposited on 2021-10-24
1
last month
Acq. date: 2025-12-10
Citations
Metrics
Views
1944
since deposited on 2021-10-24
1
last month
Acq. date: 2025-12-10
Citations