Browsing by author "Sibaja-Hernandez, Arturo"
Now showing items 1-20 of 69
-
A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; You, Shuzhen; Winderickx, Gillis; Radisic, Dunja; Lee, Willie; Ong, Patrick; Vandeweyer, Tom; Nguyen, Duy; De Meyer, Kristin; Decoutere, Stefaan (2009-10) -
A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors
Sibaja-Hernandez, Arturo; Decoutere, Stefaan; Maes, Herman (2005) -
A novel fully self-aligned SiGe:C HBT architecture featuring a single step epitaxial collector-base process
Donkers, Johan; Kramer, Mark; Van Huylenbroeck, Stefaan; Choi, Li Jen; Meunier-Beillard, Philippe; Boccardi, Guillaume; van Noort, W.; Hurkx, G.A.M.; Vanhoucke, Tony; Sibaja-Hernandez, Arturo; Vleugels, Frank; Winderickx, Gillis; Kunnen, Eddy; Peeters, Stefan; Baute, Debbie; De Vos, Brecht; Vandeweyer, Tom; Loo, Roger; Venegas, Rafael; Pijper, R.; Decoutere, Stefaan; Hijzen, Erwin (2007) -
A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology
Choi, Li Jen; Van Huylenbroeck, Stefaan; Donkers, Johan; van Noort, Wibo; Piontek, Andreas; Sibaja-Hernandez, Arturo; Meunier-Beillard, Philippe; Neuilly, Francois; Kunnen, Eddy; Leray, Philippe; Vleugels, Frank; Venegas, Rafael; Hijzen, Erwin; Decoutere, Stefaan (2007) -
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
Wang, Hongyue; Wang, Jinyan; Hsu, Brent; Zhao, Ming; Simoen, Eddy; Sibaja-Hernandez, Arturo (2021-11-22) -
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
You, Shuzhen; Decoutere, Stefaan; Nguyen, Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin (2011) -
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
You, Shuzhen; Decoutere, Stefaan; Nguyen, Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin (2012) -
Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Yu, Hao; Parvais, Bertrand; Peralagu, Uthayasankaran; ElKashlan, Rana Y.; Rodriguez, Raul; Khaled, Ahmad; Yadav, Sachin; Alian, AliReza; Zhao, Ming; Braga, N. de Almeida; Cobb, J.; Fang, J.; Cardinael, Pieter; Sibaja-Hernandez, Arturo; Collaert, Nadine (2022-12-01) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Challenges on surface conditioning in 3D device architectures: triple-gate FinFETs, gate-all-around lateral and vertical nanowire FETs
Veloso, Anabela; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Li, Waikin; Simoen, Eddy; Chan, BT; Tao, Zheng; Rosseel, Erik; Loo, Roger; Milenin, Alexey; Kunert, Bernardette; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; van Dorp, Dennis; Altamirano Sanchez, Efrain; Brus, Stephan; Marien, Philippe; Fleischmann, Claudia; Melkonyan, Davit; Huynh Bao, Trong; Eneman, Geert; Hellings, Geert; Sibaja-Hernandez, Arturo; Matagne, Philippe; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
Challenges on surface conditioning in 3D device architectures: triple-gate finFETs, gate-all-around lateral and vertical nanowireFETs
Veloso, Anabela; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Li, Waikin; Simoen, Eddy; Chan, BT; Tao, Zheng; Rosseel, Erik; Loo, Roger; Milenin, Alexey; Kunert, Bernardette; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; van Dorp, Dennis; Altamirano Sanchez, Efrain; Brus, Stephan; Marien, Philippe; Sibaja-Hernandez, Arturo; Matagne, Philippe; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance
Peralagu, Uthayasankaran; Alian, AliReza; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Chang, Shane; Simoen, Eddy; Zhao, Simeng Ellen; De Jaeger, Brice; Fleetwood, Daniel M.; Wambacq, Piet; Zhao, Ming; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2019-12) -
Comparison of a novel FSA and a QSA SiGe:C architecture for reverse operation
Sibaja-Hernandez, Arturo; Van Huylenbroeck, Stefaan; Venegas, Rafael; Donkers, Johan; Kramer, Mark; Decoutere, Stefaan (2008) -
Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs
Sandupatla, Abhinay; Wu, Wei-Min; Shih, Chun-An; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Wu, T. -L.; Ker, M. -D.; Groeseneken, Guido; Collaert, Nadine (2022) -
Comprehensive study of TSUPREM4 boron diffusion modeling in SiGeC base layers under critical RTA conditions
Sibaja-Hernandez, Arturo; Xu, Mingwei; Decoutere, Stefaan; Maes, Herman (2004-05) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
Wu, Wei-Min; Chen, Shih-Hung; Putcha, Vamsi; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Yadav, Sachin; Parvais, Bertrand; Alian, AliReza; Collaert, Nadine; Ker, Ming-Dou; Groeseneken, Guido (2021) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Groeseneken, Guido; Ker, M.D.; Collaert, Nadine (2021) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Ker, Ming-Dou; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Collaert, Nadine; Groeseneken, Guido (2022-01-25)