Browsing by author "Sibaja-Hernandez, Arturo"
Now showing items 21-40 of 69
-
First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology
Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Sibaja-Hernandez, Arturo; Walke, Amey; Yu, Hao; Deshpande, Paru; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2019-12) -
First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
Sioncke, Sonja; Franco, Jacopo; Vais, Abhitosh; Putcha, Vamsi; Nyns, Laura; Sibaja-Hernandez, Arturo; Rooyackers, Rita; Calderon Ardila, Sergio; Spampinato, Valentina; Franquet, Alexis; Maes, Willem; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Heyns, Marc; Linten, Dimitri; Mitard, Jerome; Thean, Aaron; Mocuta, Dan; Collaert, Nadine (2017) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
Parvais, Bertrand; Alian, AliReza; Peralagu, Uthayasankaran; Rodriguez, Raul; Yadav, Sachin; Khaled, Ahmad; ElKashlan, Rana Y.; Putcha, Vamsi; Sibaja-Hernandez, Arturo; Zhao, Ming; Wambacq, Piet; Collaert, Nadine; Waldron, Niamh (2020) -
Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015) -
Gated and STI defined ESD diodes in advanced bulk FinFET technologies
Chen, Shih-Hung; Linten, Dimitri; Lee, J.-W.; Scholz, Mirko; Hellings, Geert; Sibaja-Hernandez, Arturo; Boschke, Roman; Song, M.-H.; See, Y.; Groeseneken, Guido; Thean, Aaron (2014) -
Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
Sibaja-Hernandez, Arturo; You, Shuzhen; Van Huylenbroeck, Stefaan; Venegas, Rafael; De Meyer, Kristin; Decoutere, Stefaan (2011) -
Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Everaert, Jean-Luc; Eyben, Pierre; Chiarella, Thomas; Merckling, Clement; Agarwal Kumar, Tarun; Pourtois, Geoffrey; Hikavyy, Andriy; Kubicek, Stefan; Witters, Liesbeth; Sibaja-Hernandez, Arturo; Mitard, Jerome; Waldron, Niamh; Chew, Soon Aik; Demuynck, Steven; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Mocuta, Anda; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2016) -
HRXRD analysis of SiGeC layers for BiCMOS applications
Haralson, Erik; Sibaja-Hernandez, Arturo; Xu, Mingwei; Malm, Gunnar; Radamson, Henry; Östling, Mikael (2004) -
III-V/III-N technologies for next generation high-capacity wireless communication
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Boccardi, Guillaume; Cardinael, Pieter; Chauhan, Vikas; Desset, Claude; ElKashlan, Rana Y.; Khaled, Ahmad; Ingels, Mark; Kunert, Bernardette; Mols, Yves; O'Sullivan, Barry; Peralagu, Uthayasankaran; Pinho, Nelson; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Sinha, Siddhartha; Sun, Xiao; Vais, Abhitosh; Vermeersch, Bjorn; Yadav, Sachin; Yan, Dongyang; Yu, Hao; Zhang, Yang; Zhao, Ming; Van Driessche, Veerle; Gramegna, Giuseppe; Wambacq, Piet; Parvais, Bertrand; Peeters, Michael (2022) -
III/V Nano-ridge engineering for device integration on 300 mm silicon
Kunert, Bernardette; Colucci, Davide; Baryshnikova, Marina; Mols, Yves; Alcotte, Reynald; Van Thourhout, Dries; Ozdemir, Cenk Ibrahim; De Koninck, Yannick; Kuznetsova, Nadezda; Yudistira, Didit; Pantouvaki, Marianna; Van Campenhout, Joris; Vais, Abhitosh; Yadav, Sachin; Sibaja-Hernandez, Arturo; Parvais, Bertrand; Collaert, Nadine; Langer, Robert (2021) -
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Alian, Alireza; Rodriguez, Raul; Yadav, Sachin; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Putcha, Vamsi; Zhao, Ming; ElKashlan, Rana Y.; Vermeersch, Bjorn; Yu, Hao; Bury, Erik; Khaled, Ahmad; Collaert, Nadine; Parvais, Bertrand (2022) -
Impact of isolation scheme on thermal resistance and collecotr-substrate capacitance of SiGe HBTs
You, Shuzhen; Decoutere, Stefaan; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; De Meyer, Kristin (2011) -
Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodes
Chen, Shih-Hung; Lee, Jam-Wem; Linten, Dimitri; Scholz, Mirko; Song, Ming-Hsiang; Hellings, Geert; Boschke, Roman; Sibaja-Hernandez, Arturo; Groeseneken, Guido (2014-12) -
Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
Wang, Hongyue; Hsu, Brent; Zhao, Ming; Simoen, Eddy; Sibaja-Hernandez, Arturo; Wang, Jinyang (2020) -
Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N-2 remote-plasma treatment
Huang, P.; Luc, Q. H.; Chang, E. Y.; Sibaja-Hernandez, Arturo; Hsu, C. W.; Wu, J. Y.; Ko, H. L.; Tran, N. A.; Collaert, Nadine (2021) -
Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells
Veloso, Anabela; Parvais, Bertrand; Matagne, Philippe; Simoen, Eddy; Huynh Bao, Trong; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Rosseel, Erik; Ercken, Monique; Chan, BT; Delvaux, Christie; Altamirano Sanchez, Efrain; Versluijs, Janko; Tao, Zheng; Suhard, Samuel; Brus, Stephan; Sibaja-Hernandez, Arturo; Waldron, Niamh; Lagrain, Pieter; Richard, Olivier; Bender, Hugo; Vaisman Chasin, Adrian; Kaczer, Ben; Ivanov, Tsvetan; Ramesh, Siva; De Meyer, Kristin; Ryckaert, Julien; Collaert, Nadine; Thean, Aaron (2016) -
Lateral and vertical scaling of a QSA HBT for a 0.13μm 200GHz SiGe:C BiCMOS technology
Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Piontek, Andreas; Choi, Li Jen; Xu, Mingwei; Ouassif, Nordin; Vleugels, Frank; Van Wichelen, Koen; Witters, Liesbeth; Kunnen, Eddy; Leray, Philippe; Devriendt, Katia; Shi, Xiaoping; Loo, Roger; Decoutere, Stefaan (2004-09) -
Modeling the suppression of boron diffusion in Si/Si/Ge due to carbon incorporation
Rizk, Samer; Yaser M., Haddara; Sibaja-Hernandez, Arturo (2005) -
On the use of SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGe HBTs
Choi, Li Jen; Van Huylenbroeck, Stefaan; Piontek, Andreas; Sibaja-Hernandez, Arturo; Kunnen, Eddy; Meunier-Beillard, Philippe; van Noort, Wibo; Hijzen, Erwin; Decoutere, Stefaan (2007)