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Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
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Authors
Alian, Alireza
;
Rodriguez, Raul
;
Yadav, Sachin
;
Peralagu, Uthayasankaran
;
Sibaja-Hernandez, Arturo
;
Putcha, Vamsi
;
Zhao, Ming
;
ElKashlan, Rana Y.
;
Vermeersch, Bjorn
;
Yu, Hao
;
Bury, Erik
;
Khaled, Ahmad
;
Collaert, Nadine
;
Parvais, Bertrand
DOI
10.1109/ESSDERC55479.2022.9947147
EISBN
978-1-6654-8497-8
ISSN
1930-8876
Conference
52nd IEEE European Solid-State Device Research Conference (ESSDERC)
Journal
na
Title
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Publication type
Proceedings paper
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Conference contributions
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2
20.500.12860/41070.2
*
2023-04-12T10:08:18Z
validation by library/open access desk
1
20.500.12860/41070
2023-02-09T03:20:55Z
*Selected version
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