Browsing by author "Peralagu, Uthayasankaran"
Now showing items 1-20 of 34
-
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
AlGaN/GaN MISHEMT analysis from an analog point of view up to 150 oC
Agopian, Paula G.D.; Martino, Joao A; Simoen, Eddy; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020) -
Analysis of gate-metal resistance in CMOS-compatible RF GaN HEMTs
ElKashlan, Rana Y.; Rodriguez, Raul; Yadav, Sachin; Khaled, Ahmad; Peralagu, Uthayasankaran; Alian, AliReza; Waldron, Niamh; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Collaert, Nadine (2020) -
Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Yu, Hao; Parvais, Bertrand; Peralagu, Uthayasankaran; ElKashlan, Rana Y.; Rodriguez, Raul; Khaled, Ahmad; Yadav, Sachin; Alian, AliReza; Zhao, Ming; Braga, N. de Almeida; Cobb, J.; Fang, J.; Cardinael, Pieter; Sibaja-Hernandez, Arturo; Collaert, Nadine (2022-12-01) -
Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier
ElKashlan, Rana Y.; Rodriguez, Raul; Yadav, Sachin; Peralagu, Uthayasankaran; Alian, AliReza; Collaert, Nadine; Wambacq, Piet; Parvais, Bertrand (2022) -
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
Yadav, Sachin; Cardinael, Pieter; Zhao, Ming; Vondkar Kodandarama, Komal; Peralagu, Uthayasankaran; Alian, Alireza; Khaled, Ahmad; Makovejev, Sergej; Ekoga, Enrique; Lederer, Dimitri; Raskin, Jean-Pierre; Parvais, Bertrand; Collaert, Nadine (2021) -
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance
Peralagu, Uthayasankaran; Alian, AliReza; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Chang, Shane; Simoen, Eddy; Zhao, Simeng Ellen; De Jaeger, Brice; Fleetwood, Daniel M.; Wambacq, Piet; Zhao, Ming; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2019-12) -
Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs
Sandupatla, Abhinay; Wu, Wei-Min; Shih, Chun-An; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Wu, T. -L.; Ker, M. -D.; Groeseneken, Guido; Collaert, Nadine (2022) -
Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity
Cardinael, Pieter; Yadav, Sachin; Rack, Martin; Peralagu, Uthayasankaran; Alian, AliReza; Parvais, Bertrand; Collaert, Nadine; Raskin, Jean-Pierre (2024) -
ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
Wu, Wei-Min; Chen, Shih-Hung; Putcha, Vamsi; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Yadav, Sachin; Parvais, Bertrand; Alian, AliReza; Collaert, Nadine; Ker, Ming-Dou; Groeseneken, Guido (2021) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Ker, Ming-Dou; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Collaert, Nadine; Groeseneken, Guido (2022-01-25) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Groeseneken, Guido; Ker, M.D.; Collaert, Nadine (2021) -
Experimental study of MISHEMT from 450 K down to 200 K for analog applications
Perina, Welder F.; Martino, Joao Antonio; Simoen, Eddy; Peralagu, Uthayasankaran; Collaert, Nadine; Agopian, Paula G. D. (2023) -
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications
Zhao, S. E.; Putcha, Vamsi; Bury, Erik; Franco, Jacopo; Walke, Amey; Peralagu, Uthayasankaran; Zhao, Ming; Alian, AliReza; Kaczer, Ben; Waldron, Niamh; Linten, Dimitri; Parvais, Bertrand; Collaert, Nadine (2020) -
Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
Collaert, Nadine; Alian, AliReza; De Jaeger, Brice; Peralagu, Uthayasankaran; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Capogreco, Elena; Devriendt, Katia; Hopf, Toby; Kenis, Karine; Mannaert, Geert; Milenin, Alexey; Peter, Antony; Sebaai, Farid; Teugels, Lieve; van Dorp, Dennis; Wostyn, Kurt; Horiguchi, Naoto; Waldron, Niamh (2019-03) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
Parvais, Bertrand; Alian, AliReza; Peralagu, Uthayasankaran; Rodriguez, Raul; Yadav, Sachin; Khaled, Ahmad; ElKashlan, Rana Y.; Putcha, Vamsi; Sibaja-Hernandez, Arturo; Zhao, Ming; Wambacq, Piet; Collaert, Nadine; Waldron, Niamh (2020) -
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
Agopian, P. G. D.; Carmo, G. J.; Martino, J. A.; Simoen, Eddy; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2021) -
III-V/III-N technologies for next generation high-capacity wireless communication
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Boccardi, Guillaume; Cardinael, Pieter; Chauhan, Vikas; Desset, Claude; ElKashlan, Rana Y.; Khaled, Ahmad; Ingels, Mark; Kunert, Bernardette; Mols, Yves; O'Sullivan, Barry; Peralagu, Uthayasankaran; Pinho, Nelson; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Sinha, Siddhartha; Sun, Xiao; Vais, Abhitosh; Vermeersch, Bjorn; Yadav, Sachin; Yan, Dongyang; Yu, Hao; Zhang, Yang; Zhao, Ming; Van Driessche, Veerle; Gramegna, Giuseppe; Wambacq, Piet; Parvais, Bertrand; Peeters, Michael (2022) -
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Alian, Alireza; Rodriguez, Raul; Yadav, Sachin; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Putcha, Vamsi; Zhao, Ming; ElKashlan, Rana Y.; Vermeersch, Bjorn; Yu, Hao; Bury, Erik; Khaled, Ahmad; Collaert, Nadine; Parvais, Bertrand (2022)