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Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

dc.contributor.authorAlian, Alireza
dc.contributor.authorRodriguez, Raul
dc.contributor.authorYadav, Sachin
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorZhao, Ming
dc.contributor.authorElKashlan, Rana Y.
dc.contributor.authorVermeersch, Bjorn
dc.contributor.authorYu, Hao
dc.contributor.authorBury, Erik
dc.contributor.authorKhaled, Ahmad
dc.contributor.authorCollaert, Nadine
dc.contributor.authorParvais, Bertrand
dc.date.accessioned2023-04-12T10:09:36Z
dc.date.available2023-02-09T03:20:55Z
dc.date.available2023-04-12T10:09:36Z
dc.date.issued2022
dc.identifier.issn1930-8876
dc.identifier.otherWOS:000904209900042
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41070.2
dc.sourceWOS
dc.titleImpact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
dc.typeProceedings paper
dc.contributor.imecauthorAlian, Alireza
dc.contributor.imecauthorRodriguez, Raul
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorElKashlan, Rana Y.
dc.contributor.imecauthorVermeersch, Bjorn
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorKhaled, Ahmad
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecRodriguez, Raul::0000-0002-4457-8942
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecVermeersch, Bjorn::0000-0001-8640-672X
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecKhaled, Ahmad::0000-0003-2892-3176
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecElKashlan, Rana Y.::0000-0003-0576-4344
dc.identifier.doi10.1109/ESSDERC55479.2022.9947147
dc.identifier.eisbn978-1-6654-8497-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage384
dc.source.endpage387
dc.source.conference52nd IEEE European Solid-State Device Research Conference (ESSDERC)
dc.source.conferencedateSEP 19-22, 2022
dc.source.conferencelocationMilan
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/41070.2*2023-04-12T10:08:18Zvalidation by library/open access desk
120.500.12860/410702023-02-09T03:20:55Z

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