Browsing by author "Zhao, Ming"
Now showing items 1-20 of 127
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200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application
Zhao, Ming; Li, Xiangdong; Decoutere, Stefaan (2019) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
3D stacking using Cu-Cu direct bonding for 40μm pitch and beyond
Hu, Yu-Hsiang; Rebibis, Kenneth June; Zhao, Ming; La Manna, Antonio; Beyne, Eric; Liu, C.S.; Lii, M.J.; Yu, C.H. (2012) -
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
A comprehensive study of MOVPE growth on 200 mm GaN-on-SOI for monolithic integrated GaN ICs
Zhao, Ming; Geens, Karen; Li, Xiangdong; Amirifar, Nooshin; Decoutere, Stefaan (2021) -
A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor
Ge, Lei; Peng, Yan; Li, Bin; Chen, Xiaohua; Xu, Mingsheng; Wang, Xiwei; Cui, Yingxin; Wang, Dufu; Han, Jisheng; Cheong, Kuan Yew; Tanner, Philip; Zhao, Ming; Xu, Xiangang (2022) -
Accurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone lines
Morris, Richard; Arnoldi, Laurent; Cuduvally, Ramya; Melkonyan, Davit; Fleischmann, Claudia; Zhao, Ming; Vandervorst, Wilfried (2017) -
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
AlN/AlGaN/GaN wafer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs
Kandaswamy, Prem Kumar; Liang, Hu; Zhao, Ming; Saripalli, Yoga; Porter Carlson, Eric; Thapa, Sarad Bahadur; Van Hove, Marleen; Richard, Olivier; De Vos, Brecht; Vancoille, Eric; Dutta, Barundeb (2014) -
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
Analysis of gate-metal resistance in CMOS-compatible RF GaN HEMTs
ElKashlan, Rana Y.; Rodriguez, Raul; Yadav, Sachin; Khaled, Ahmad; Peralagu, Uthayasankaran; Alian, AliReza; Waldron, Niamh; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Collaert, Nadine (2020) -
Analysis of III-nitride device heterostructures using APT
Morris, Richard; Cuduvally, Ramya; Zhao, Ming; van der Heide, Paul; Vandervorst, Wilfried (2018) -
Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates
Zhang, Weihang; Simoen, Eddy; Zhao, Ming; Zhang, J. (2019) -
Analysis of point defect distributions in AlGaN/GaN heterostructures via spectroscopic photo current-voltage measurements
Ozden, Burcu; Khanal, Min P; Youn, Suhyeon; Mirkhani, Vahid; Yapabandara, Kosala; Park, Minseo; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Saripalli, Yoga (2016) -
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
Wang, Hongyue; Wang, Jinyan; Hsu, Brent; Zhao, Ming; Simoen, Eddy; Sibaja-Hernandez, Arturo (2021-11-22) -
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Assessment of N-type and P-type doping in (Al,Ga)N heterostructures by Scanning probe microscopy techniques
Minj, Albert; Zhao, Ming; Bakeroot, Benoit; Paredis, Kristof; Wouters, Lennaert; Hantschel, Thomas; Decoutere, Stefaan (2021)