Browsing by author "Zhao, Ming"
Now showing items 21-40 of 127
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Atom probe conditions for stoichiometric quantification of GaN and Al1 xGaxN
Morris, Richard; Arnoldi, Laurent; Cuduvally, Ramya; Melkonyan, Davit; Fleischmann, Claudia; Zhao, Ming; Vandervorst, Wilfried (2017) -
Atom probe of GaN/AlGaN heterostructures: the role of electric field, sample crystallography and laser excitation on quantification
Morris, Richard; Cuduvally, Ramya; Melkonyan, Davit; Zhao, Ming; van der Heide, Paul; Vandervorst, Wilfried (2019) -
Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Yu, Hao; Parvais, Bertrand; Peralagu, Uthayasankaran; ElKashlan, Rana Y.; Rodriguez, Raul; Khaled, Ahmad; Yadav, Sachin; Alian, AliReza; Zhao, Ming; Braga, N. de Almeida; Cobb, J.; Fang, J.; Cardinael, Pieter; Sibaja-Hernandez, Arturo; Collaert, Nadine (2022-12-01) -
Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
Li, Xiangdong; Zhao, Ming; Bakeroot, Benoit; Geens, Karen; Guo, Weiming; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier Spectroscopy
Lechaux, Yoann; Minj, Albert; Mechin, Laurence; Liang, Hu; Geens, Karen; Zhao, Ming; Simoen, Eddy; Guillet, Bruno (2020) -
Cleaning requirement in the thinning module for 3D-Stacked IC (3D-SIC) integration
Wostyn, Kurt; Zhao, Ming; Cui, Hushan; Laermans, Patrick; Jourdain, Anne; Verbinnen, Greet; Struyf, Herbert; De Strycker, Steven; Claes, Martine; Travaly, Youssef; Leunissen, Peter (2010) -
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
Yadav, Sachin; Cardinael, Pieter; Zhao, Ming; Vondkar Kodandarama, Komal; Peralagu, Uthayasankaran; Alian, Alireza; Khaled, Ahmad; Makovejev, Sergej; Ekoga, Enrique; Lederer, Dimitri; Raskin, Jean-Pierre; Parvais, Bertrand; Collaert, Nadine (2021) -
CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors
Geens, Karen; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; atka, Alexander; Vincze, Andrej; Decoutere, Stefaan (2017) -
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance
Peralagu, Uthayasankaran; Alian, AliReza; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Chang, Shane; Simoen, Eddy; Zhao, Simeng Ellen; De Jaeger, Brice; Fleetwood, Daniel M.; Wambacq, Piet; Zhao, Ming; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2019-12) -
Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states
Kimura, Kenji; Nakajima, Kaoru; Zhao, Ming; Nohira, Hiroshi; Hattori, Takeo; Kobata, Masaaki; Ikenaga, Eiji; Kim, Jung Jin; Kobayashi, Keisuku; Conard, Thierry; Vandervorst, Wilfried (2008) -
Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques
Minj, Albert; Geens, Karen; Liang, Hu; Han, Han; Noel, Celine; Bakeroot, Benoit; Paredis, Kristof; Zhao, Ming; Hantschel, Thomas; Decoutere, Stefaan (2023) -
Defect Assessment in AlN Nucleation Layers Grown on Silicon and Silicon-on-Insulator Substrates
Simoen, Eddy; Zhang, Weihang; Zhang, Jiahan; Claeys, Cor; Zhao, Ming (2019) -
Defect-induced stress imaging in single and multi-crystalline semiconductor materials
Herms, Martin; Wagner, Matthias; Kayser, Stefan; Kießling, Frank; Poklad, Anna; Zhao, Ming; Kretzer, Ulrich (2018) -
Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
Li, Xiangdong; Geens, Karen; Zhao, Ming; You, Shuzhen; Wischmeyer, Frank; Odnoblyudov, Vladimir; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Demonstration of integrating post-thinning clean and TSV exposure recess etch into a wafer backside thinning process
Zhao, Ming; Hayakawa, Susumu; Nishida, Yoshiteru; Jourdain, Anne; Tabuchi, Tomotaka; Leunissen, Peter (2012) -
Demonstration of ultra-thin Si grinding process controlled by in-situ non-contact gauge for 3D stacked IC (3D-SIC)
Zhao, Ming; Verbinnen, Greet; Yoshida, Shinji; Hayakawa, Susumu; Tabuchi, Tomotaka; Jourdain, Anne; Beyne, Eric; Swinnen, Bart; Leunissen, Peter (2010) -
Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Priesol, Juraj; Satka, Alexander; Visalli, Domenica; Derluyn, Joff; Zhao, Ming; Stoffels, Steve (2017) -
Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Priesol, Juraj; Satka, Alexander; Visalli, Domenica; Zhao, Ming; Stoffels, Steve (2017) -
Determination of the self-compensation ratio of carbon in AlGaN for HEMTs
Rackauskas, Ben; Uren, Michael; Stoffels, Steve; Zhao, Ming; Decoutere, Stefaan; Kuball, Martin (2018) -
Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
You, Shuzhen; Posthuma, Niels; Ronchi, Nicolo; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018)