Browsing by author "Zhao, Ming"
Now showing items 41-60 of 127
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Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Novak, Tomas; Van Hove, Marleen; Stoffels, Steve; De Jaeger, Brice; Posthuma, Niels; Marcon, Denis; Decoutere, Stefaan; Langer, Robert (2015) -
Dispersion-free low RF loss GaN-on-Si structures grown on 200 mm Si substrate using MOVPE
Zhao, Ming; Chang, Shane; Langer, Robert; Collaert, Nadine (2019) -
Electrical and DLTS Characterization of AlN buffers for GaN on Si technology
Mare, Juraj; Mikolasek, Miroslav; Drobny, Jakub; Zhao, Ming; Stoffels, Steve; Kosa, Arpad; Benko, Peter; Chvála, Aleš; Bakeroot, Benoit; Decoutere, Stefaan; Stuchlikova, Lubica (2019) -
Enhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates
Liang, Hu; Posthuma, Niels; Stoffels, Steve; Zhao, Ming; Decoutere, Stefaan (2019) -
Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
Vohra, Anurag; Geens, Karen; Zhao, Ming; Syshchyk, Olga; Hahn, Herwig; Fahle, Dirk; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Langer, Robert; Decoutere, Stefaan (2022) -
Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices
Guo, Weiming; Geens, Karen; Zhao, Ming; Behmenburg, Hannes; Fahle, Dirk; Odnoblyudov, Vlad; Basceri, Cem; Aktas, Ozgur; Decoutere, Stefaan (2018) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications
Zhao, S. E.; Putcha, Vamsi; Bury, Erik; Franco, Jacopo; Walke, Amey; Peralagu, Uthayasankaran; Zhao, Ming; Alian, AliReza; Kaczer, Ben; Waldron, Niamh; Linten, Dimitri; Parvais, Bertrand; Collaert, Nadine (2020) -
Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN
Morris, Richard; Cuduvally, Ramya; Lin, Jhao-Rong; Zhao, Ming; Vandervorst, Wilfried; Thuvander, Mattias; Fleischmann, Claudia (2022-11) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2021) -
GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
Parvais, Bertrand; Alian, AliReza; Peralagu, Uthayasankaran; Rodriguez, Raul; Yadav, Sachin; Khaled, Ahmad; ElKashlan, Rana Y.; Putcha, Vamsi; Sibaja-Hernandez, Arturo; Zhao, Ming; Wambacq, Piet; Collaert, Nadine; Waldron, Niamh (2020) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Ge STI CMP using fixed abrasive pads
Zhao, Ming; Ong, Patrick; Leunissen, Peter (2011) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Heuken, Michael (2016) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Posthuma, Niels; Heuken, Michael (2016) -
Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT
Martin, Eickelkamp; Fahle, Dirk; Mauder, Christof; Zhao, Ming; Liang, Hu; Posthuma, Niels; Van Hove, Marleen; Heuken, Michael (2017)